Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

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URI: http://hdl.handle.net/10498/17164
DOI: 10.1016/j.diamond.2010.02.030
ISSN: 0925-9635
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2010-02-25Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química InorgánicaSource
Diamond and Related Materials 19 (2010) 904-907Abstract
A homoepitaxial boron-doped diamond single layer is investigated by means of Fourier transformed infrared spectroscopy (FTIR) and cathodoluminescence (CL). Both techniques are shown to be complementary. μ-FTIR mapping allows to determine the location of active boron while CL allows discernability between passivation
and compensation. Hydrogen incorporation during chemical vapour deposition (CVD) growth is revealed to passivate boron acceptors. The obtained results highlight that plasma etching can induce a dissociation of B–H centres.
Subjects
Diamond; Boron doping; CL; FTIRCollections
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