Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

Fernández Lorenzo, Concepción; Araújo Gay, Daniel; Martín, J.; Alcántara, J; Navas, J.; Villar, Maria del Pilar; Alegre Salguero, María de la Paz; Volpe, Pierre Nicola; Omnés, Franck; Bustarret, Etienne

doi:10.1016/j.diamond.2010.02.030

Identificadores

URI: http://hdl.handle.net/10498/17164

DOI: 10.1016/j.diamond.2010.02.030

ISSN: 0925-9635

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Author/s

Fernández Lorenzo, Concepción

; Araújo Gay, Daniel

; Martín, J.; Alcántara, J; Navas, J.; Villar, Maria del Pilar; Alegre Salguero, María de la Paz

; Volpe, Pierre Nicola; Omnés, Franck; Bustarret, Etienne

Date

2010-02-25

Department

Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica

Source

Diamond and Related Materials 19 (2010) 904-907

Abstract

A homoepitaxial boron-doped diamond single layer is investigated by means of Fourier transformed infrared spectroscopy (FTIR) and cathodoluminescence (CL). Both techniques are shown to be complementary. μ-FTIR mapping allows to determine the location of active boron while CL allows discernability between passivation and compensation. Hydrogen incorporation during chemical vapour deposition (CVD) growth is revealed to passivate boron acceptors. The obtained results highlight that plasma etching can induce a dissociation of B–H centres.

Subjects

Diamond; Boron doping; CL; FTIR

UniversidaddeCádiz