Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

Thumbnail
Identificadores

URI: http://hdl.handle.net/10498/17373

DOI: 10.1002/pssa.201431178

ISSN: 1862-6319

Files
Statistics
Metrics and citations
 
Share
Export
EndNoteBibTexRIS
Metadata
Show full item record
Author/s
Piñero Charlo, José CarlosAuthority UCA; Araújo Gay, DanielAuthority UCA; Traoré, A; Chicot, Gauthier; Maréchal, A; Muret, P; Alegre Salguero, María de la PazAuthority UCA; Villar, Maria del Pilar; Pernot, J
Date
2014-06-23
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Source
Physica Status Solidi (A) Applications and Materials Science 2014 - Vol.211(10), pp. 2367-2371
Abstract
Metal and oxide distribution in diamond metal–oxide– semiconductor (MOS) structures are characterized using several transmission electron microscopy (TEM) modes at nanometric scale. To understand their electrical behavior, oxygen distribution using electron energy loss spectroscopy (EELS) through the layer structure, high-resolution electron microscopy (HREM), and annular dark field (ADF) observations are reported. Oxide thickness variations, as well as oxygen content variations have been identified and characterized at an atomic resolution. The latter allows to understand the related electrical behavior as, for example, leakages or shortcuts.
Subjects
diamond; oxide characterization; power device; schottky; TEM
Collections