Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

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2014-06-23Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química InorgánicaSource
Physica Status Solidi (A) Applications and Materials Science 2014 - Vol.211(10), pp. 2367-2371Abstract
Metal and oxide distribution in diamond metal–oxide–
semiconductor (MOS) structures are characterized using
several transmission electron microscopy (TEM) modes at
nanometric scale. To understand their electrical behavior,
oxygen distribution using electron energy loss spectroscopy
(EELS) through the layer structure, high-resolution electron
microscopy (HREM), and annular dark field (ADF) observations
are reported. Oxide thickness variations, as well as oxygen
content variations have been identified and characterized at an
atomic resolution. The latter allows to understand the related
electrical behavior as, for example, leakages or shortcuts.
Subjects
diamond; oxide characterization; power device; schottky; TEMCollections
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