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Selectively boron doped homoepitaxial diamond growth for power device applications

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URI: http://hdl.handle.net/10498/24510

DOI: 10.1063/5.0031478

ISSN: 0003-6951

ISSN: 1077-3118 (internet)

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2021_101.pdf (2.236Mb)
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Author/s
Lloret Vieira, Fernando ManuelAuthority UCA; Eon, D.; Donatini, F.; Araújo Gay, DanielAuthority UCA
Date
2021-01-11
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica; Física Aplicada
Source
Appl. Phys. Lett. 118, 023504 (2021)
Abstract
Diamond lateral growth is a powerful technique for the design and fabrication of diamond-based power electronic devices. Growth orientation affects the diamond deposition in terms of growth rate, surface roughness, and impurity incorporation. It has been shown that the finally grown surface of a patterned substrate can be predesigned based on the growth conditions. Thus, simultaneous growth along different surface orientations yields regions with different properties. In line with this, the incorporation of boron in a microwave plasma enhanced chemical vapor deposition laterally deposited epilayer over a mesa patterned {100}-oriented diamond substrate was studied by cathodoluminescence. It was observed that laterally oriented facets were highly boron doped in contrast to the {100}-oriented surfaces, which did not show any bound exciton emission, related to the doping. This study shows that, by designing the initial pattern and tuning the conditions, it is possible to drive a selective incorporation of boron into the grown layer.
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This work is under a Creative Commons License Atribución 4.0 Internacional

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