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dc.contributor.authorAraújo Gay, Daniel 
dc.contributor.authorLloret Vieira, Fernando Manuel 
dc.contributor.authorAlba Muñoz, Gonzalo
dc.contributor.authorAlegre Salguero, María de la Paz 
dc.contributor.authorVillar Castro, María del Pilar 
dc.contributor.otherCiencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánicaes_ES
dc.contributor.otherFísica Aplicadaes_ES
dc.dateinfo:eu-repo/date/embargoEnd/2022-02-01
dc.date.accessioned2021-04-20T12:16:35Z
dc.date.available2021-04-20T12:16:35Z
dc.date.issued2021-02
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118 (internet)
dc.identifier.urihttp://hdl.handle.net/10498/24714
dc.description.abstractDoping diamond layers for electronic applications has become straightforward during the last two decades. However, dislocation generation in diamond during the microwave plasma enhanced chemical vapor deposition growth process is still not fully understood. This is a truly relevant topic to avoid for an optimal performance of any device, but, usually, it is not considered when designing diamond structures for electronic devices. The incorporation of a dopant, here boron, into a lattice as close as that of diamond, can promote the appearance of dislocations in the epilayer. The present contribution analyzes the different processes that can take place in this epilayer and gives some rules to avoid the formation of dislocations, based on the comparison of the different dislocation generation mechanisms. Indeed, competitive mechanisms, such as doping atom proximity effect and lattice strain relaxation, are here quantified for heavily boron-doped diamond epilayers. The resulting growth condition windows for defect-free heavily doped diamond are here deduced, introducing the diamond parameters and its lattice expansion in several previously published critical thickness (h(c)) and critical doping level relationships for different doping levels and growth conditions. Experimental evidence supports the previously discussed thickness-doping-growth condition relationships. Layers with and without dislocations reveal that not only the thickness but also other key factors such as growth orientation and growth parameters are important, as dislocations are shown to be generated in epilayers with a thickness below the People and Bean critical thickness.es_ES
dc.formatapplication/pdfes_ES
dc.language.isoenges_ES
dc.publisherAMER INST PHYSICSes_ES
dc.rightsAtribución 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.sourceAppl. Phys. Lett. 118, 052108 (2021)es_ES
dc.titleDislocation generation mechanisms in heavily boron-doped diamond epilayerses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsinfo:eu-repo/semantics/embargoedAccesses_ES
dc.identifier.doi10.1063/5.0031476
dc.relation.projectIDMinisterio de Economia y Competitividad. Gobierno de España [TEC2017-86347-C2-1-R]es_ES


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Atribución 4.0 Internacional
This work is under a Creative Commons License Atribución 4.0 Internacional