@article{10498/17159,
year = {2014},
month = {10},
url = {http://hdl.handle.net/10498/17159},
abstract = {Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4
/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 X 10 20 at/cm3 range in the <111> direction and at 3.2 X 1021 at/cm
3 for the <001> one. Strain related effects induced by the doping are shown not to
be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.},
keywords = {Defect},
keywords = {synthetic diamond},
keywords = {CTEM},
keywords = {boron doped diamond},
title = {Critical boron-doping levels for generation of dislocations in synthetic diamond},
doi = {10.1063/1.4900741},
author = {Alegre, Maria de la Paz and Araújo Gay, Daniel and Fiori, Alexandre and Pinero, Jose Carlos and Lloret, Fernando and Villar Castro, María del Pilar and Achatz, Philippe and Chicot, Gauthier and Bustarret, Etienne and Jomard, F},
}