@misc{10498/17160,
year = {2014},
month = {8},
url = {http://hdl.handle.net/10498/17160},
abstract = {Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called deltadoped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe
resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6K<T<450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.660.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.},
keywords = {delta},
keywords = {doped diamond},
keywords = {electronic properties},
title = {Electronic and physico-chemical properties of nanmetric boron delta-doped diamond structures},
doi = {10.1063/1.4893186},
author = {Chicot, Gauthier and Fiori, A and Volpe, Pierre Nicola and Tran Thi, T.N. and Gerbedoen, J.C. and Bousquet, J and Alegre Salguero, María de la Paz and Piñero Charlo, José Carlos and Araújo Gay, Daniel and Jomard, F and Soltani, A and Morse, J and Härtwing, J and Tranchant, N and Mer-Calfati, C and Arnault, J. C. and Eon, D. and Omnés, F and Pernot, Julien and Bustarret, Etienne and Delahaye, J and Grenet, T},
}