@misc{10498/17161,
year = {2010},
month = {3},
url = {http://hdl.handle.net/10498/17161},
abstract = {The capability of transmission electronmicroscopy (TEM) using the high angle annular dark fieldmode (HAADF,also labelled Z-contrast) to quantify boron concentration, in the high doping range between 1019cm−3 and 1021cm−3, is demonstrated. Thanks to the large relative variation of atomic number Z between carbon and boron, doping concentration maps and profiles are obtained with a nanometer-scale resolution. A novel numerical simulation procedure allows the boron concentration quantification and demonstrates the high sensitivity and
spatial resolution of the technique.},
keywords = {Diamond},
keywords = {TEM},
keywords = {homoepitaxy},
keywords = {HAADF},
keywords = {Boron doping},
title = {Local boron doping quantification in homoepitaxial diamond structures},
doi = {10.1016/j.diamond.2010.02.043},
author = {Araújo Gay, Daniel and Achatz, Philippe and El Bouayadi, R and García, A.J. and Alegre Salguero, María de la Paz and Villar, Maria del Pilar and Jomard, F and Bustarret, E},
}