@misc{10498/17373,
year = {2014},
month = {6},
url = {http://hdl.handle.net/10498/17373},
abstract = {Metal and oxide distribution in diamond metal–oxide–
semiconductor (MOS) structures are characterized using
several transmission electron microscopy (TEM) modes at
nanometric scale. To understand their electrical behavior,
oxygen distribution using electron energy loss spectroscopy
(EELS) through the layer structure, high-resolution electron
microscopy (HREM), and annular dark field (ADF) observations
are reported. Oxide thickness variations, as well as oxygen
content variations have been identified and characterized at an
atomic resolution. The latter allows to understand the related
electrical behavior as, for example, leakages or shortcuts.},
keywords = {diamond},
keywords = {oxide characterization},
keywords = {power device},
keywords = {schottky},
keywords = {TEM},
title = {Metal–oxide–diamond interface
investigation by TEM: Toward MOS and
Schottky power device behavior},
doi = {10.1002/pssa.201431178},
author = {Piñero Charlo, José Carlos and Araújo Gay, Daniel and Traoré, A and Chicot, Gauthier and Maréchal, A and Muret, P and Alegre Salguero, María de la Paz and Villar, Maria del Pilar and Pernot, Julien},
}