@misc{10498/25883,
year = {2022},
month = {1},
url = {http://hdl.handle.net/10498/25883},
abstract = {Metal Oxide Semiconductor capacitors were fabricated using p-type O-terminated (001) diamond and zirconium
dioxide deposited by atomic layer deposition at low temperature (100 ◦C). X-ray diffraction and transmission
electron microscopy evidence monoclinic structure and polycrystalline nature of the oxide layer. I-V, C–V and
C–F experiments have been performed in a large frequency range, i.e. from 1 Hz to 1 MHz, in order to analyse
the electrical properties of the metal/dielectric/diamond stack. The presence of charges in the oxide and
interface states induces a flat-band voltage shift in the C–V curve and a strong Fermi level pinning effect. A
leakage current mechanism considering the correlation of the microstructural characterization and the electrical
response is proposed.},
organization = {The authors would like to thank the Ministerio de Economia y Competitividad (MINECO) of the Spanish Government for funding under Grant No. TEC2017-86347-C2-1-R (DiamMOS project) and from ESP2017 91820 and PID2019 -110219RB-100, PID2020-117201RB-C21 projects. The authors would also thank the Junta de Andalucía (Comunidad Autónoma of Andalusia Government, Spain) for funding from FEDER-UCA18-106470, FEDER-UCA18-107851 and P20-00946 projects and as well as the grants for stays in research centres from the Promotion Programme of Research Activity of the University of Cadiz. In addition the authors acknowledge the expertise and support on different techniques allowing device fabrication (laser lithography and ALD) and characterization (XRD) of: Bruno Fernandez (Nanofab, Inst. Néel, CNRS, Grenoble), Laurent Cagnon and Eric Mossang (Inst. Néel, CNRS, Grenoble). The authors also thank to IMEYMAT (University of Cádiz) for the TEM facilities used in the microstructural characterization.},
publisher = {ELSEVIER},
keywords = {Diamond},
keywords = {Oxygen termination},
keywords = {Zirconia},
keywords = {Capacitors},
title = {Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs},
doi = {10.1016/j.diamond.2021.108745},
author = {Soto Portillo, Beatriz and Cañas, J. and Villar Castro, María del Pilar and Araújo Gay, Daniel and Pernot, Julien},
}