@misc{10498/27583,
year = {2022},
month = {7},
url = {http://hdl.handle.net/10498/27583},
abstract = {At room temperature, a 10 mu m cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 mu m cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer and GaAs substrate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed that the heterostructure on GaSb-on-GaAs is epitaxial, single-crystalline but with a reduced material homogeneity, extended lattice defects and atomic segregation/intermixing in comparison to that on the GaSb substrate. Strain-induced degradation of the material quality is observed by temperature-dependent current-voltage measurements. The T2SL with the IMF array appears as a potentially effective route to mitigate the impact of the lattice mismatch once its fabrication is fully optimized for these systems, but additional strain compensating measures can enable a low cost, scalable manufacturing of focal plane arrays (FPA) for thermal imaging cameras for spectroscopy, dynamic scene projection, thermometry, and remote gas sensing.},
publisher = {NATURE PORTFOLIO},
title = {Monolithic integration of a 10 mu m cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform},
doi = {10.1038/s41598-022-15538-3},
author = {Kwan, D. C. M. and Kesaria, M. and Jiménez Ríos, Juan Jesús and Srivastava, V. and Delmas, M. and Liang, B. L. and Morales Sánchez, Francisco Miguel and Huffaker, D. L.},
}