@misc{10498/29431,
year = {2023},
month = {2},
url = {http://hdl.handle.net/10498/29431},
abstract = {Based on the stability of the deep depletion regime in diamond and the outstanding properties of this promising material for its use in power devices, p-channel deep depletion metal oxide semiconductor field effect transistors were fabricated on a (001) Ib nitrogen-doped high pressure high temperature diamond substrate. Taking advantage of the new concept of the non-volatile diamond-based photo switch, it is demonstrated that it is possible to tune the normally-on and normally-off states of the transistor by configuring the pn-junction space charge region. The devices under study was designed following an interdigital-like and a circular-like architectures presenting low threshold voltages (between 3 V and −3 V), an on/off ratio of 107 and a critical electric field numerically assessed of 9 MV.cm−1 at room temperature. This new degree of freedom opens the route for diamond based power electronics.},
publisher = {Elsevier},
keywords = {D3MOSFET},
keywords = {Critical electric field},
keywords = {p-Channel},
keywords = {N-doping},
keywords = {Non-volatile photo switch},
keywords = {Threshold voltage control},
keywords = {O-terminated diamond},
keywords = {ZrO2},
title = {Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET},
doi = {10.1016/j.diamond.2023.109802},
author = {Soto Portillo, Beatriz and Couret, M. and Cañas Fernández, Jesús and Castelan, A. and Rouger, N. and Araújo Gay, Daniel and Villar Castro, María del Pilar and Pernot, J.},
}