@misc{10498/30203,
year = {2016},
month = {4},
url = {http://hdl.handle.net/10498/30203},
abstract = {Electrical and nano-structural properties of Zr and WC-based Schottky power diodes are compared andused for investigating oxide-related effects at the diamond/metal interface. Differences in Schottky bar-rier heights and ideality factors of both structures are shown to be related with the modification of theoxygen-terminated diamond/metal interface configuration. Oxide formation, oxide thickness variationsand interfacial oxygen redistribution, associated with thermal treatment are demonstrated. Ideality fac-tors close to ideality (nWC= 1.02 and nZr= 1.16) are obtained after thermal treatment and are shown to berelated with the relative oxygen content at the surface (OCRWC= 3.03 and OCRZr= 1.5). Indeed, thermaltreatment at higher temperatures is shown to promote an escape of oxygen for the case of the WC diode,while it generates a sharper accumulation of oxygen at the metal/diamond interface for the case of Zrdiode. Therefore, the metal-oxygen affinity is shown to be a key parameter to improve diamond-basedSchottky diodes.},
organization = {This work was made possible through grants from theSpanishMinistry of Economy and Competitiveness (ref: TEC2014-54357-C2-2-R, HiVolt-nano project) and from the European H2020Program (ref: SEP-210184415, Green Diamond project). Theauthors also wish to thank “Ministerio de Ciencia e Innovación” forthe grants BES-2010-039524 and EEBB-I-13-07696 of the projectTEC2009-11399.},
publisher = {Elsevier},
keywords = {Diamond},
keywords = {Schottky},
keywords = {Oxygen-terminated},
keywords = {TEM},
keywords = {Power devices},
title = {Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality},
doi = {10.1016/j.apsusc.2016.04.166},
author = {Piñero Charlo, José Carlos and Araújo Gay, Daniel and Fiori, Alexandre and Traoré, A and Villar Castro, María del Pilar and Eon, David and Muret, Pierre and Pernot, Julien and Teraji, Tokuyuki},
}