@misc{10498/30530,
year = {2015},
url = {http://hdl.handle.net/10498/30530},
abstract = {Si nanowires (NWs) have been converted to silicon-silicon carbide (Si-SiC) core-shell
NWs at different conditions of substrate temperature in an ultra-high vacuum using a molecular
beam epitaxy (MBE) set-up. In-situ auger electron spectroscopy (AES) and reflection high-energy
electron diffraction (RHEED) allowed a control of the growth process. To evaluate structure and
chemical modifications of their shape, scanning electron microscopy (SEM) and conventional
transmission electron microscopy (TEM) is used. Evidence of Si-carburization is shown by electron
energy loss spectroscopy (EELS) and selected area electron diffraction (SAED) related
investigation. Facet dependence of the carbon diffusion is shown with a maximum carburization
depth of 20nm on the (331) and (131) facet of the NWs. Si-SiC core-shell NWs free of planar
defects have been obtained for conversion temperatures lower than 800ºC.},
publisher = {Trans Tech Publications Ltd},
keywords = {SiC conversion},
keywords = {SiC NWs},
keywords = {MBE},
keywords = {Temperature effect},
keywords = {TEM},
title = {Si NWs conversion to Si-SiC core-shell NWs by MBE},
author = {Lloret Vieira, Fernando Manuel and Araújo Gay, Daniel and Villar Castro, María del Pilar and Liu, Linsheng and Zekentes, Konstantino},
}