@misc{10498/30536,
year = {2020},
url = {http://hdl.handle.net/10498/30536},
abstract = {An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. However, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. In fact, this is a critical bottleneck that needs to be analysed in order to develop a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments used to evaluate various key parameters such as the sharpness of the transition regions, the behaviour of the implanted region and diamond lattice performance in Smart-Cut processes. Indeed, an outstanding sp2/sp3 relation close to ideality (it is, that of undamaged diamond) is evidenced in the diamond-transfer region.},
title = {Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study},
doi = {10.1016/J.APSUSC.2020.146998},
author = {Piñero Charlo, José Carlos and de Vecchy, John and Fernández de los Reyes, Daniel and Alba Muñoz, Gonzalo and Widiez, J and Di Cioccio, L and Lloret Vieira, Fernando Manuel and Araújo Gay, Daniel and Pernot, Julien},
}