@misc{10498/30538,
year = {2014},
url = {http://hdl.handle.net/10498/30538},
abstract = {Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully lattice relaxed SiC 3C-type crystalline structure. Defects as dislocations at the diamond/SiC interface and stacking faults, in the thick SiC layer are revealed by high resolution TEM and CTEM. From the invisibility criteria, using dark field observations, 〈110〉 type Burger vector are identified.},
keywords = {diamond},
keywords = {heteroepitaxy},
keywords = {SiC},
keywords = {TEM},
keywords = {VLS},
title = {Diamond as substrate for 3C-SiC growth: A TEM study},
doi = {10.1002/pssa.201431179},
author = {Lloret Vieira, Fernando Manuel and Piñero Charlo, José Carlos and Villar Castro, María del Pilar and Gheeraert, Etienne and Vo-Ha, A. and Soulière, Veronique and Rebaud, M and Carole, Davy and Ferro, Gabriel},
}