@misc{10498/30806,
year = {2012},
url = {http://hdl.handle.net/10498/30806},
abstract = {The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.},
keywords = {Indium arsenide},
keywords = {Luminescence},
keywords = {Rapid thermal annealing},
keywords = {Semiconductor quantum dots},
title = {High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing},
doi = {10.1063/1.4773008},
author = {Ulloa, J. M. and LLorens, J.M. and Alén, B. and Fernández de los Reyes, Daniel and Sales Lérida, David and González Robledo, David and Hierro, A.},
}