@misc{10498/30845,
year = {2013},
url = {http://hdl.handle.net/10498/30845},
abstract = {This work analyses the Bi incorporation in InAs1?xBix/InAs(100) epilayers grown by MBE through advanced transmission electron microscopy techniques. Samples grown from 350–400 ?C resulted in Bi contents <3:3% exhibiting compositional variation in the growth direction. In contrast, roughly spherical clusters appeared in the sample grown at lower temperatures. The clusters are made up of the binary InBi with a tetragonal PbO phase surrounded by a matrix of InAs0:95Bi0:05 indicating the Bi solubility limit in InAs. These InBi crystals underwent a cubic distortion and are tilted 55? with regard to the InAsBi matrix. The crystallographic relationships are analysed in detail.},
title = {Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy},
doi = {10.7567/APEX.6.112601},
author = {Domínguez, Lara and Fernández de los Reyes, Daniel and Bastiman, Faebian and Sales Lérida, David and Richards, R. D. and Mendes, D. and David, John P. R. and González Robledo, David},
}