@misc{10498/30858,
year = {2012},
url = {http://hdl.handle.net/10498/30858},
abstract = {The possibility of an independent tuning of the electron and hole confinement in InAs/GaAs quantum dots (QDs) by using a thin GaAsSbN capping layer (CL) is studied. By controlling the Sb and N contents in the quaternary alloy, the band structure of the QDs can be broadly tuned and converted from type-II in the valence band (high Sb contents) to type-I and to type-II in the conduction band (high N contents). Nevertheless, the simultaneous presence of Sb and N is found to induce strain and composition inhomogeneities in the CL and to degrade the photoluminescence of the structure.},
publisher = {American Institute of Physics},
title = {Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer},
doi = {10.1063/1.3673563},
author = {Ulloa, J.M. and Fernández de los Reyes, Daniel and Montes, M. and Yamamoto, K. and Sales Lérida, David and González Robledo, David and Guzman, A. and Hierro, A.},
}