@misc{10498/31011,
year = {2018},
url = {http://hdl.handle.net/10498/31011},
abstract = {In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 °C and then annealed at 500 °C in vacuum conditions. The high quality of Al2O3 and an Al2O3/diamond interface is verified thanks to electrical measurements and Transmission Electron Microscopy (TEM) measurements. A density of interface states lower than 1012 eV-1 cm-2 is measured from the flat-band regime to the depletion regime. The shift of the flat-band voltage and the leakage current through the oxide are significantly reduced in good agreement with the mono-crystalline character of the Al2O3 layer revealed by TEM},
publisher = {AIP Publishing},
title = {High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication},
doi = {10.1063/1.5018403},
author = {Pham, T. T. and Gutiérrez Peinado, Marina and Masante, C. and Rouger, N. and Eon, D. and Gheeraert, Etienne and Araújo Gay, Daniel and Pernot, Julien},
}