@misc{10498/32866,
year = {2024},
url = {http://hdl.handle.net/10498/32866},
abstract = {This paper investigates the effect of GaAsBi strain reduction layers (SRLs) on InAs QDs
with different Bi fluxes to achieve nanostructures with improved temperature stability. The SRLs are
grown at a lower temperature (370 ◦C) than the usual capping temperature for InAs QDs (510 ◦C).
The study finds that GaAs capping at low temperatures reduces QD decomposition and leads to
larger pyramidal dots but also increases the threading dislocation (TD) density. When adding Bi to the
capping layer, a significant reduction in TD density is observed, but unexpected structural changes
also occur. Increasing the Bi flux does not increase the Bi content but rather the layer thickness. The
maximum Bi content for all layers is 2.4%. A higher Bi flux causes earlier Bi incorporation, along with
the formation of an additional InGaAs layer above the GaAsBi layer due to In segregation from QD
erosion. Additionally, the implementation of GaAsBi SRLs results in smaller dots due to enhanced
QD decomposition, which is contrary to the expected function of an SRL. No droplets were detected
on the surface of any sample, but we did observe regions of horizontal nanowires within the epilayers
for the Bi-rich samples, indicating nanoparticle formation.},
organization = {This research was co-funded by the Spanish National Research Agency
(AEI/10.13039/501100011033), the European Union under the 2014–2020 ERDF Operational Program,
Regional Government of Andalusia (project ProyExcel_01013) and the European Social Fund and
Ministry of Economic Transformation, Industry, Knowledge, and Universities of Regional Government of Andalusia, PAIDI2020 (DOC_01360). The work of R.R. was supported by the Royal Academy
of Engineering under the Research Fellowships scheme},
publisher = {MDPI},
keywords = {GaAsBi capping},
keywords = {self-assembled InAs QDs},
keywords = {STEM compositional analyses},
title = {Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots},
doi = {10.3390/NANO14040375},
author = {Braza Blanco, María Verónica and Fernández de los Reyes, Daniel and Ben Fernández, Teresa and Flores Gallegos, Sara and Bailey, Nicholas James and Carr, Matthew and Richards, Robert and González Robledo, David},
}