@misc{10498/35176,
year = {2016},
url = {http://hdl.handle.net/10498/35176},
abstract = {In this communication, we analyse by transmission electron microscopy (TEM) the structural properties of
an InAlAsSb/InGaAs/InP heterostructures grown by Molecular Beam Epitaxy (MBE). The photoluminescence emission of the samples grown at different temperatures shows the presence of subbandgap tail of states, suggesting the presence of compositional alloy variations in the quaternary
InAlAsSb material.},
title = {HAADF-STEM analysis of the composition distribution in InAlAsSb/InGaAs/InP layers for solar cells applications},
doi = {10.1017/S1431927616000349},
author = {Baladés, Nuria and Herrera, Miriam and Sales, D.L and Fernández, Natalia and Delgado, FJ and Hernández-Maldonado, D and Ramasse, Q and González, M and Tomasulo, S and Abell, J and Walters, R and Molina, SI},
}