@misc{10498/35177,
year = {2017},
url = {http://hdl.handle.net/10498/35177},
abstract = {The effect of a post-growth thermal treatment in two different heterostructures with InAlAsSb as the top layer grown by molecular beam epitaxy lattice-matched to InP, have been studied by diffraction contrast transmission electron microscopy (TEM).1 This novel top cell layer material with application in ultra-high efficiency solar cells were grown on (001) InP substrate with or without an InGaAs buffer layer. Initial photoluminescence measurements revealed deviations from their predicted bandgap, suggesting
non-random atomic distribution of the quaternary layer. Then, a thermal annealing was performed at
different temperatures and times. The effect on the structure of the InAlAsSb active layer caused by the
new arrangement of layers and the post-growth annealing treatments has been reported. Our results
show that the small compositional fluctuations of the as-grown heterostructures disappear after being
annealed, and the bandgap energy correspondingly increases towards the predicted value.},
title = {Effect of annealing on the compositional modulation of InAlAsSb},
doi = {10.1016/J.APSUSC.2016.06.091},
author = {Baladés Ruiz, Nuria and Sales Lérida, David and Herrera Collado, Miriam and Delgado González, Francisco Javier and González, M and Clark, k and Pinsunkajana, P and Hoven, n and Hubbard, S and Tomasulo, S and Walters, JR and Molina Rubio, Sergio Ignacio},
}