@misc{10498/35179,
year = {2016},
url = {http://hdl.handle.net/10498/35179},
abstract = {In this communication, we have studied by transmission electron microscopy (TEM) the structural
properties of a heterostructure of layers of GaSb QDs for solar cell applications. The sample has been
grown by molecular beam epitaxy (MBE) on a GaAs substrate. Initially, we have analysed the sample by
diffraction contrast 220 BF, strain contrasts due to the 3D geometry of the QDs are observed.},
title = {Structural Quality of GaSb/GaAs Quantum Dots for Solar Cells Analyzed by Electron Microscopy Techniques},
doi = {10.1017/S1431927616000386},
author = {Fernández Delgado, Natalia and Herrera Collado, Miriam and Baladés Ruiz, Nuria and James, JS and Krier, A and Fujita, H and Molina Rubio, Sergio Ignacio},
}