@misc{10498/35551,
year = {2024},
month = {10},
url = {http://hdl.handle.net/10498/35551},
abstract = {An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. As this process involves H+ implantation, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. So, the identification of a window of parameters that allows to induce controlled blistering is a critical bottleneck towards a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments that were used to evaluate the goodness of a new approach for the Smart-Cut process. Indeed, a window of parameters where graphite nano-layers are formed on the implanted region is identified.},
publisher = {Elsevier},
keywords = {Diamond},
keywords = {Smartcut},
keywords = {Thin film},
keywords = {Ion implantation},
keywords = {Amorphization},
title = {Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study},
doi = {10.1016/j.apsusc.2024.161570},
author = {Piñero Charlo, José Carlos and Fernández de los Reyes, Daniel and Lloret Vieira, Fernando Manuel and Le Van-Jodin, L. and Chretien, J. and Masante, C. and Araújo Gay, Daniel},
}