@misc{10498/39171,
year = {2026},
month = {2},
url = {http://hdl.handle.net/10498/39171},
abstract = {Among the ultra-wide bandgap (UWBG) materials, diamond has unique properties for high power device applications and can deliver p-type and n-type doping. However, the achievement of low resistive ohmic contacts on n-type diamond limits the fabrication of bipolar devices. This study investigates the use of focused Ga+ion beam (FIB) to fabricate metal-free ohmic contacts on phosphorus-doped diamond, with a doping concentration of ∼5 × 1018 cm−3estimated by cathodoluminescence. FIB irradiation was used to locally modify the diamond surface, resulting in a conductive channel with ohmic, albeit highly resistive, behaviour. Using the circular Transfer Length Method (cTLM), a specific contact resistance of 4.3·104 Ω·cm2was obtained. This value is consistent with state-of-the-art results at similar doping levels, demonstrating that FIB is a viable and efficient technique for contact formation in diamond-based electronic devices.},
publisher = {Elsevier},
keywords = {Electric contactors},
keywords = {Electron devices},
keywords = {Fabrication},
keywords = {Gallium compounds},
keywords = {Ion beams},
keywords = {Phosphorus},
keywords = {Semiconductor doping},
title = {Ohmic contacts on (111)-oriented phosphorus-doped diamond fabricated by FIB transformation and surface Ga+ implantation},
doi = {10.1016/J.DIAMOND.2025.113265},
author = {Mesas Peña, Gabriel and Lloret Vieira, Fernando Manuel and Freire de Rivas, Antonio and Millán Barba, Josué and Alba Muñoz, Gonzalo and Suzuki, M. and Villar Castro, María del Pilar and Araújo Gay, Daniel},
}