@misc{10498/39317,
year = {2026},
url = {http://hdl.handle.net/10498/39317},
abstract = {Low-temperature atomic layer deposition (ALD) is increasingly important for the integration of layered metal dichalcogenides such as tin diselenide (SnSe2) into advanced nanoelectronic devices, where compatibility with temperature-sensitive substrates and precise thickness control are essential. Using a novel and highly reactive selenium precursor, namely, bis(trimethylstannyl)selenide or Se(SnMe3)2, SnSe2 films are deposited at reduced temperatures. As-deposited films are initially amorphous, however, post-deposition annealing at 250°C induces crystallization. Structural analysis reveals a clear evolution in crystallinity: ultrathin films (∼25 nm) exhibit nearly single-crystalline, defect-free domains, while thicker films (∼100 nm) transition to a polycrystalline structure. This controlled variation in crystal quality directly influences the electronic transport properties, demonstrating the potential of low-temperature ALD combined with mild annealing for scalable fabrication of high-performance, thickness-engineered SnSe2-based devices.},
publisher = {John Wiley and Sons Inc},
keywords = {2D materials},
keywords = {low temperature ALD},
keywords = {SnSe2},
keywords = {thin film},
keywords = {transport properties},
title = {Thickness-Driven Modulation of Electronic Transport in SnSe2-grown Films by Low-Temperature Atomic Layer Deposition},
doi = {10.1002/AELM.202500560},
author = {Ruiz-Clavijo, Alejandra and Bahrami, Amin and Charvot, Jaroslav and Lehmann, Sebastian and Julin, Jaakko and Wolf, Daniel and Giebeler, Lars and Wrzesińska Lashkova, Angelika and Pieck, Fabian and Outón Porras, Javier and Tonner-Zech, Ralf and Bureš, Filip and Vaynzof, Yana and Blanco Ollero, Eduardo and Nielsch, Kornelius},
}