%0 Journal Article 
%A Alegre, Maria de la Paz
%A Araújo Gay, Daniel
%A Fiori, Alexandre
%A Pinero, Jose Carlos
%A Lloret, Fernando
%A Villar Castro, María del Pilar
%A Achatz, Philippe
%A Chicot, Gauthier
%A Bustarret, Etienne
%A Jomard, F
%T Critical boron-doping levels for generation of dislocations in synthetic diamond
%D 2014
%@ 0003-6951
%U http://hdl.handle.net/10498/17159
%X Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4
/H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 X 10 20 at/cm3 range in the <111> direction and at 3.2 X 1021 at/cm
3 for the <001> one. Strain related effects induced by the doping are shown not to
be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.
%K Defect
%K synthetic diamond
%K CTEM
%K boron doped diamond
%~ Universidad de Cádiz