%0 Journal Article 
%A Araújo Gay, Daniel
%A Achatz, Philippe
%A El Bouayadi, R
%A García, A.J.
%A Alegre Salguero, María de la Paz
%A Villar, Maria del Pilar
%A Jomard, F
%A Bustarret, E
%T Local boron doping quantification in homoepitaxial diamond structures
%D 2010
%@ 0925-9635
%U http://hdl.handle.net/10498/17161
%X The capability of transmission electronmicroscopy (TEM) using the high angle annular dark fieldmode (HAADF,also labelled Z-contrast) to quantify boron concentration, in the high doping range between 1019cm−3 and 1021cm−3, is demonstrated. Thanks to the large relative variation of atomic number Z between carbon and boron, doping concentration maps and profiles are obtained with a nanometer-scale resolution. A novel numerical simulation procedure allows the boron concentration quantification and demonstrates the high sensitivity and
spatial resolution of the technique.
%K Diamond
%K TEM
%K homoepitaxy
%K HAADF
%K Boron doping
%~ Universidad de Cádiz