%0 Journal Article 
%A Núñez-Cascajero, Arántzazu
%A Naranjo, Fernando B.
%A Mata Fernández, María de la
%A Molina Rubio, Sergio Ignacio
%T Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications
%D 2021
%@ 1996-1944
%U http://hdl.handle.net/10498/24997
%X Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.
%K III-nitrides
%K AlInN
%K AlN buffer
%K RF sputtering
%K TEM
%~ Universidad de Cádiz