%0 Journal Article 
%A Helal, Hicham
%A Benamara, Zineb
%A Wederni, Mouhamed Amine
%A Mourad, Sabrine
%A Khirouni, Kamel
%A Monier, Guillaume
%A Robert-Goumet, Christine
%A Rabehi, Abdelaziz
%A Kacha, Arslane Hatem
%A Bakkali, Hicham
%A Cervera Gontard, Lionel
%A Domínguez de la Vega, Manuel
%T Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range
%D 2021
%@ 1996-1944
%U http://hdl.handle.net/10498/25830
%X Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized
over a wide temperature range. As a result, the reverse current Iinv increments from 1 x 10^-7 A
at 80 K to about 1 x 10^-5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at
80 K to 1.01 at 420 K. The barrier height q b grows abnormally from 0.46 eV at 80 K to 0.83 eV at
420 K. The tunnel mechanism TFE effect is responsible for the qfi_b behavior. The series resistance
Rs is very low, decreasing from 13.80 W at 80 K to 4.26 W at 420 K. These good results are due to the
good quality of the interface treated by the nitridation process. However, the disadvantage of the
nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.
%K Conduction mechanisms
%K Schottky diode
%K GaN
%K n-GaAs
%K Nitridation
%K Barrier height
%K I-V-T
%~ Universidad de Cádiz