%0 Journal Article 
%A Soto Portillo, Beatriz
%A Cañas, J.
%A Villar Castro, María del Pilar
%A Araújo Gay, Daniel
%A Pernot, Julien
%T Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs
%D 2022
%@ 0925-9635
%U http://hdl.handle.net/10498/25883
%X Metal Oxide Semiconductor capacitors were fabricated using p-type O-terminated (001) diamond and zirconium
dioxide deposited by atomic layer deposition at low temperature (100 ◦C). X-ray diffraction and transmission
electron microscopy evidence monoclinic structure and polycrystalline nature of the oxide layer. I-V, C–V and
C–F experiments have been performed in a large frequency range, i.e. from 1 Hz to 1 MHz, in order to analyse
the electrical properties of the metal/dielectric/diamond stack. The presence of charges in the oxide and
interface states induces a flat-band voltage shift in the C–V curve and a strong Fermi level pinning effect. A
leakage current mechanism considering the correlation of the microstructural characterization and the electrical
response is proposed.
%K Diamond
%K Oxygen termination
%K Zirconia
%K Capacitors
%~ Universidad de Cádiz