%0 Journal Article 
%A Soto Portillo, Beatriz
%A Couret, M.
%A Cañas Fernández, Jesús
%A Castelan, A.
%A Rouger, N.
%A Araújo Gay, Daniel
%A Villar Castro, María del Pilar
%A Pernot, J.
%T Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET
%D 2023
%@ 0925-9635
%U http://hdl.handle.net/10498/29431
%X Based on the stability of the deep depletion regime in diamond and the outstanding properties of this promising material for its use in power devices, p-channel deep depletion metal oxide semiconductor field effect transistors were fabricated on a (001) Ib nitrogen-doped high pressure high temperature diamond substrate. Taking advantage of the new concept of the non-volatile diamond-based photo switch, it is demonstrated that it is possible to tune the normally-on and normally-off states of the transistor by configuring the pn-junction space charge region. The devices under study was designed following an interdigital-like and a circular-like architectures presenting low threshold voltages (between 3 V and −3 V), an on/off ratio of 107 and a critical electric field numerically assessed of 9 MV.cm−1 at room temperature. This new degree of freedom opens the route for diamond based power electronics.
%K D3MOSFET
%K Critical electric field
%K p-Channel
%K N-doping
%K Non-volatile photo switch
%K Threshold voltage control
%K O-terminated diamond
%K ZrO2
%~ Universidad de Cádiz