%0 Journal Article 
%A Masante, Cedric
%A De Vecchy, John
%A Mazen, F
%A Milesi, F
%A Di cioccio, L
%A Pernot, Julien
%A Lloret Vieira, Fernando Manuel
%A Araújo Gay, Daniel
%A Piñero Charlo, José Carlos
%A Rochat, N
%A Pierre, F
%A Servant, F
%A Widiez, J
%T Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
%D 2022
%@ 0925-9635
%U http://hdl.handle.net/10498/30471
%X The effect of H+ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToF-SIMS, cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut™ technology have been identified in monocrystalline diamond, using two sets of hydrogen implantation and annealing. A first hydrogen implantation followed by a first annealing leads to amorphization of a buried layer without hydrogen exodiffusion. Blisters and exfoliations appear at the surface of the diamond samples, after a second hydrogen implantation inside the pre-amorphized diamond layer and a final annealing, as evidenced by TEM and optical microscopy. Demonstration of hydrogen-induced blistering is a major step to adapt the Smart Cut™ process on diamond material. This process is compatible with wafer bonding before the second annealing and therefore open the way for thin diamond layer transfer on a bonded receiver wafer, still not achieved to date.
%~ Universidad de Cádiz