%0 Journal Article 
%A Lloret Vieira, Fernando Manuel
%A Araújo Gay, Daniel
%A Villar Castro, María del Pilar
%A Liu, Linsheng
%A Zekentes, Konstantino
%T Si NWs conversion to Si-SiC core-shell NWs by MBE
%D 2015
%@ 1662-9752

%U http://hdl.handle.net/10498/30530
%X Si nanowires (NWs) have been converted to silicon-silicon carbide (Si-SiC) core-shell
NWs at different conditions of substrate temperature in an ultra-high vacuum using a molecular
beam epitaxy (MBE) set-up. In-situ auger electron spectroscopy (AES) and reflection high-energy
electron diffraction (RHEED) allowed a control of the growth process. To evaluate structure and
chemical modifications of their shape, scanning electron microscopy (SEM) and conventional
transmission electron microscopy (TEM) is used. Evidence of Si-carburization is shown by electron
energy loss spectroscopy (EELS) and selected area electron diffraction (SAED) related
investigation. Facet dependence of the carbon diffusion is shown with a maximum carburization
depth of 20nm on the (331) and (131) facet of the NWs. Si-SiC core-shell NWs free of planar
defects have been obtained for conversion temperatures lower than 800ºC.
%K SiC conversion
%K SiC NWs
%K MBE
%K Temperature effect
%K TEM
%~ Universidad de Cádiz