%0 Journal Article 
%A Piñero Charlo, José Carlos
%A de Vecchy, John
%A Fernández de los Reyes, Daniel
%A Alba Muñoz, Gonzalo
%A Widiez, J
%A Di Cioccio, L
%A Lloret Vieira, Fernando Manuel
%A Araújo Gay, Daniel
%A Pernot, Julien
%T Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
%D 2020
%U http://hdl.handle.net/10498/30536
%X An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. However, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. In fact, this is a critical bottleneck that needs to be analysed in order to develop a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments used to evaluate various key parameters such as the sharpness of the transition regions, the behaviour of the implanted region and diamond lattice performance in Smart-Cut processes. Indeed, an outstanding sp2/sp3 relation close to ideality (it is, that of undamaged diamond) is evidenced in the diamond-transfer region.
%~ Universidad de Cádiz