%0 Journal Article 
%A Ulloa, J. M.
%A LLorens, J.M.
%A Alén, B.
%A Fernández de los Reyes, Daniel
%A Sales Lérida, David
%A González Robledo, David
%A Hierro, A.
%T High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
%D 2012
%@ 00036951
%U http://hdl.handle.net/10498/30806
%X The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.
%K Indium arsenide
%K Luminescence
%K Rapid thermal annealing
%K Semiconductor quantum dots
%~ Universidad de Cádiz