%0 Journal Article 
%A Domínguez, Lara
%A Fernández de los Reyes, Daniel
%A Bastiman, Faebian
%A Sales Lérida, David
%A Richards, R. D.
%A Mendes, D.
%A David, John P. R.
%A González Robledo, David
%T Formation of tetragonal InBi clusters in InAsBi/InAs(100) heterostructures grown by molecular beam epitaxy
%D 2013
%@ 18820786
%U http://hdl.handle.net/10498/30845
%X This work analyses the Bi incorporation in InAs1?xBix/InAs(100) epilayers grown by MBE through advanced transmission electron microscopy techniques. Samples grown from 350–400 ?C resulted in Bi contents <3:3% exhibiting compositional variation in the growth direction. In contrast, roughly spherical clusters appeared in the sample grown at lower temperatures. The clusters are made up of the binary InBi with a tetragonal PbO phase surrounded by a matrix of InAs0:95Bi0:05 indicating the Bi solubility limit in InAs. These InBi crystals underwent a cubic distortion and are tilted 55? with regard to the InAsBi matrix. The crystallographic relationships are analysed in detail.
%~ Universidad de Cádiz