%0 Journal Article 
%A Ulloa, J.M.
%A Fernández de los Reyes, Daniel
%A Montes, M.
%A Yamamoto, K.
%A Sales Lérida, David
%A González Robledo, David
%A Guzman, A.
%A Hierro, A.
%T Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
%D 2012
%@ 00036951
%U http://hdl.handle.net/10498/30858
%X The possibility of an independent tuning of the electron and hole confinement in InAs/GaAs quantum dots (QDs) by using a thin GaAsSbN capping layer (CL) is studied. By controlling the Sb and N contents in the quaternary alloy, the band structure of the QDs can be broadly tuned and converted from type-II in the valence band (high Sb contents) to type-I and to type-II in the conduction band (high N contents). Nevertheless, the simultaneous presence of Sb and N is found to induce strain and composition inhomogeneities in the CL and to degrade the photoluminescence of the structure.
%~ Universidad de Cádiz