%0 Journal Article 
%A Pham, T. T.
%A Gutiérrez Peinado, Marina
%A Masante, C.
%A Rouger, N.
%A Eon, D.
%A Gheeraert, Etienne
%A Araújo Gay, Daniel
%A Pernot, Julien
%T High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
%D 2018
%@ 00036951
%U http://hdl.handle.net/10498/31011
%X In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide Semiconductor Capacitors using 40 nm thick Al2O3 deposited by Atomic Layer Deposition at 380 °C and then annealed at 500 °C in vacuum conditions. The high quality of Al2O3 and an Al2O3/diamond interface is verified thanks to electrical measurements and Transmission Electron Microscopy (TEM) measurements. A density of interface states lower than 1012 eV-1 cm-2 is measured from the flat-band regime to the depletion regime. The shift of the flat-band voltage and the leakage current through the oxide are significantly reduced in good agreement with the mono-crystalline character of the Al2O3 layer revealed by TEM
%~ Universidad de Cádiz