%0 Journal Article 
%A Shiffa, Mustaqeem
%A Dewes, Benjamin T.
%A Bradford, Jonathan
%A Cottam, Nathan D.
%A Cheng, Tin S.
%A Mellor, Christopher J.
%A Makarovskiy, Oleg
%A Rahman, Kazi
%A O'Shea, James N.
%A Beton, Peter H.
%A Novikov, Sergei V.
%A Ben Fernández, Teresa
%A González Robledo, David
%A Xie, Jiahao
%A Zhang, Lijun
%A Patanè, Amalia
%T Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing
%D 2024
%@ 1613-6829

%U http://hdl.handle.net/10498/32125
%X 2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top-down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch-tape,” are widely used, but have limited prospects for precise engineering of functionalities and scalability. Here, a bottom-up technique based on epitaxy is used to demonstrate high-quality, wafer-scale 2SEM based on the wide band gap gallium selenide (GaSe) compound. GaSe layers of well-defined thickness are developed using a bespoke facility for the epitaxial growth and in situ studies of 2SEM. The dominant centrosymmetry and stacking of the individual van der Waals layers are verified by theory and experiment; their optical anisotropy and resonant absorption in the UV spectrum are exploited for photon sensing in the technological UV-C spectral range, offering a scalable route to deep-UV optoelectronics.
%K gallium selenide
%K molecular beam epitaxy
%K optoelectronics
%K photodetectors
%~ Universidad de Cádiz