%0 Journal Article 
%A Ghasemi, Arsham
%A Kepaptsoglou, Demie
%A Galindo Riaño, Pedro Luis
%A Ramasse, Quentin M.
%A Hesjedal, Thorsten
%A Lazarov, Vlado K.
%T Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3
%D 2017
%@ 1884-4057

%U http://hdl.handle.net/10498/33828
%X We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1-xSe/Bi2Te3 interface. The FexCu1-xSe/Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of ∼19%. First-principle calculations show that the large strain at the FexCu1-xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms.
%~ Universidad de Cádiz