%0 Journal Article 
%A Lu, Xiaotang
%A Mata Fernández, María de la
%A Arbiol, Jordi
%A Korgel, Brian A.
%T Colloidal Silicon-Germanium Nanorod Heterostructures
%D 2017
%@ 1520-5002

%U http://hdl.handle.net/10498/33898
%X Colloidal nanorods with axial Si and Ge heterojunction segments were produced by solution-liquid-solid (SLS) growth using Sn as a seed metal and trisilane and diphenylgermane as Si and Ge reactants. The low solubility of Si and Ge in Sn helps to generate abrupt Si-Ge heterojunction interfaces. To control the composition of the nanorods, it was also necessary to limit an undesired side reaction between the Ge reaction byproduct tetraphenylgermane and trisilane. High-resolution transmission electron microscopy reveals that the Si-Ge interfaces are epitaxial, which gives rise to a significant amount of bond strain resulting in interfacial misfit dislocations that nucleate stacking faults in the nanorods.
%~ Universidad de Cádiz