%0 Journal Article 
%A Al Alam, Elias
%A Cortes Mayol, Ignacio
%A Besland, Marie-Paule
%A Goullet, Antoine
%A Lajaunie, Luc Cyrille Jacques
%A Regreny, Philippe
%A Cordier, Yves
%A Cordier, Julien
%A Cazarré, A.
%A Isoird, K.
%A Sarrabayrouse, Gérard
%A Morancho, Frédéric
%T Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces
%D 2011
%@ 1089-7550

%U http://hdl.handle.net/10498/34624
%X In this work, SiO2/GaN MOS structures have been fabricated using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) for deposition of silicon dioxide (SiO2) at low temperature (300 °C) on N-type, NID and P-type GaN epitaxial layers. Surface preparation involving chemical, UV-Ozone oxidation and oxygen plasma oxidation have been investigated by XPS analysis of the GaN surfaces prior to SiO2 deposition. The association of UV ozone and plasma oxidation allows a complete removal of carbon contamination and has a huge beneficial effect on the quality of the SiO2/GaN interface. Electrical C-V characterizations put into evidence the improved quality of the SiO2/GaN interface with a low interface trap density of 1010 cm−2 eV−1. The advantage of this soft interface treatment is thus specially observed for the N-type samples without annealing step, whereas improvements are still needed in the case of NID and P-type samples.
%~ Universidad de Cádiz