%0 Journal Article 
%A Baladés Ruiz, Nuria
%A Sales Lérida, David
%A Herrera Collado, Miriam
%A Delgado González, Francisco Javier
%A González, M
%A Clark, k
%A Pinsunkajana, P
%A Hoven, n
%A Hubbard, S
%A Tomasulo, S
%A Walters, JR
%A Molina Rubio, Sergio Ignacio
%T Effect of annealing on the compositional modulation of InAlAsSb
%D 2017
%@ 0169-4332
%U http://hdl.handle.net/10498/35177
%X The effect of a post-growth thermal treatment in two different heterostructures with InAlAsSb as the top layer grown by molecular beam epitaxy lattice-matched to InP, have been studied by diffraction contrast transmission electron microscopy (TEM).1 This novel top cell layer material with application in ultra-high efficiency solar cells were grown on (001) InP substrate with or without an InGaAs buffer layer. Initial photoluminescence measurements revealed deviations from their predicted bandgap, suggesting
non-random atomic distribution of the quaternary layer. Then, a thermal annealing was performed at
different temperatures and times. The effect on the structure of the InAlAsSb active layer caused by the
new arrangement of layers and the post-growth annealing treatments has been reported. Our results
show that the small compositional fluctuations of the as-grown heterostructures disappear after being
annealed, and the bandgap energy correspondingly increases towards the predicted value.
%~ Universidad de Cádiz