%0 Journal Article 
%A Piñero Charlo, José Carlos
%A Fernández de los Reyes, Daniel
%A Lloret Vieira, Fernando Manuel
%A Le Van-Jodin, L.
%A Chretien, J.
%A Masante, C.
%A Araújo Gay, Daniel
%T Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study
%D 2024
%@ 0169-4332
%U http://hdl.handle.net/10498/35551
%X An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. As this process involves H+ implantation, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. So, the identification of a window of parameters that allows to induce controlled blistering is a critical bottleneck towards a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments that were used to evaluate the goodness of a new approach for the Smart-Cut process. Indeed, a window of parameters where graphite nano-layers are formed on the implanted region is identified.
%K Diamond
%K Smartcut
%K Thin film
%K Ion implantation
%K Amorphization
%~ Universidad de Cádiz