%0 Journal Article 
%A Ruiz-Clavijo, Alejandra
%A Bahrami, Amin
%A Charvot, Jaroslav
%A Lehmann, Sebastian
%A Julin, Jaakko
%A Wolf, Daniel
%A Giebeler, Lars
%A Wrzesińska Lashkova, Angelika
%A Pieck, Fabian
%A Outón Porras, Javier
%A Tonner-Zech, Ralf
%A Bureš, Filip
%A Vaynzof, Yana
%A Blanco Ollero, Eduardo
%A Nielsch, Kornelius
%T Thickness-Driven Modulation of Electronic Transport in SnSe2-grown Films by Low-Temperature Atomic Layer Deposition
%D 2026
%@ 2199-160X
%U http://hdl.handle.net/10498/39317
%X Low-temperature atomic layer deposition (ALD) is increasingly important for the integration of layered metal dichalcogenides such as tin diselenide (SnSe2) into advanced nanoelectronic devices, where compatibility with temperature-sensitive substrates and precise thickness control are essential. Using a novel and highly reactive selenium precursor, namely, bis(trimethylstannyl)selenide or Se(SnMe3)2, SnSe2 films are deposited at reduced temperatures. As-deposited films are initially amorphous, however, post-deposition annealing at 250°C induces crystallization. Structural analysis reveals a clear evolution in crystallinity: ultrathin films (∼25 nm) exhibit nearly single-crystalline, defect-free domains, while thicker films (∼100 nm) transition to a polycrystalline structure. This controlled variation in crystal quality directly influences the electronic transport properties, demonstrating the potential of low-temperature ALD combined with mild annealing for scalable fabrication of high-performance, thickness-engineered SnSe2-based devices.
%K 2D materials
%K low temperature ALD
%K SnSe2
%K thin film
%K transport properties
%~ Universidad de Cádiz