Critical boron-doping levels for generation of dislocations in synthetic diamond

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URI: http://hdl.handle.net/10498/17159

DOI: 10.1063/1.4900741

ISSN: 0003-6951

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Author/s
Alegre Salguero, María de la Paz; Araújo Gay, Daniel; Fiori, Alexandre; Piñero Charlo, José Carlos; Lloret Vieira, Fernando Manuel; Villar Castro, María del Pilar; Achatz, Philippe; Chicot, Gauthier; Bustarret, Etienne; Jomard, F
Date
2014-10-28
Department
Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Source
Applied physics letters 105 (2014) 173103
Abstract
Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4 /H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 X 10 20 at/cm3 range in the <111> direction and at 3.2 X 1021 at/cm 3 for the <001> one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.
Subjects
Defect; synthetic diamond; CTEM; boron doped diamond
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