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dc.contributor.authorAlegre, Maria de la Paz
dc.contributor.authorAraújo Gay, Daniel
dc.contributor.authorFiori, Alexandre
dc.contributor.authorPinero, Jose Carlos
dc.contributor.authorLloret, Fernando
dc.contributor.authorVillar Castro, María del Pilar
dc.contributor.authorAchatz, Philippe
dc.contributor.authorChicot, Gauthier
dc.contributor.authorBustarret, Etienne
dc.contributor.authorJomard, F
dc.contributor.otherCiencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánicaen_US
dc.date.accessioned2015-02-25T09:18:56Z
dc.date.available2015-02-25T09:18:56Z
dc.date.issued2014-10-28T00:00:00Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10498/17159
dc.description.abstractDefects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH4 /H2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 X 10 20 at/cm3 range in the <111> direction and at 3.2 X 1021 at/cm 3 for the <001> one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.en_US
dc.formatapplication/pdf
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/openAccess
dc.sourceApplied physics letters 105 (2014) 173103en_US
dc.subjectDefecten_US
dc.subjectsynthetic diamonden_US
dc.subjectCTEMen_US
dc.subjectboron doped diamonden_US
dc.titleCritical boron-doping levels for generation of dislocations in synthetic diamonden_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.description.physDesc6 pages
dc.identifier.doi10.1063/1.4900741


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