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dc.contributor.authorAlegre, Maria de la Paz
dc.contributor.authorBustarret, Etienne
dc.contributor.authorBen Fernández, Teresa
dc.contributor.authorVillar, Maria del Pilar
dc.contributor.authorAraújo Gay, Daniel
dc.contributor.otherCiencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánicaen_US
dc.date.accessioned2015-02-26T09:27:16Z
dc.date.available2015-02-26T09:27:16Z
dc.date.issued2009-01-01T00:00:00Z
dc.identifier.urihttp://hdl.handle.net/10498/17165
dc.description.abstractHomoepitaxial diamond structure observation by transmission electron microscopy (TEM) is still a very hard job due to the difficulty in preparing electron transparent samples for the further observation. The present contribution details the experimental operations with their respective conditions step by step. Finally high resolution TEM (HREM) observations of a CVD grown epilayer on a unnintentionally doped HPHT (001) oriented substrate are present to show the high quality of the sample preparation method.en_US
dc.formatapplication/pdf
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/openAccess
dc.source33rd proceedings books Wocsdice Vol 4 (2009) 14-17en_US
dc.subjectHomoepitaxial diamonden_US
dc.subjectelectrons microscopyen_US
dc.subjectFIB-dual beamen_US
dc.titleTEM study of homoepitaxial diamond layers scheduled for high power devices: FIB method of sample preparationen_US
dc.typeinfo:eu-repo/semantics/bookParten_US
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.description.physDesc4 pages


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