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dc.contributor.authorAraújo Gay, Daniel
dc.contributor.authorAlegre, Maria de la Paz
dc.contributor.authorGarcía, Antonio
dc.contributor.authorVillar, Maria del Pilar
dc.contributor.authorBustarret, Etienne
dc.contributor.authorAchatz, Philippe
dc.contributor.authorVolpe, Pierre Nicola
dc.contributor.authorOmnés, Franck
dc.contributor.otherCiencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánicaen_US
dc.date.accessioned2015-05-26T09:59:03Z
dc.date.available2015-05-26T09:59:03Z
dc.date.issued2011-02-08T00:00:00Z
dc.identifier.issn1610-1642
dc.identifier.urihttp://hdl.handle.net/10498/17372
dc.description.abstractIn some diamond-based semiconducting devices, large variations of doping level are required over short distances. Tools to determine doping level and defects distribution should therefore be developed. The present contribution shows the capabilities of electron microscopy in this field. Focused ion beam (FIB-dual beam) cross section preparations allowed evaluating doping level in highly boron doped sample with doping transition down to some nm by diffraction contrast mode of transmission electron microscopy (CTEM) and by high angle annular dark field mode of scanning transmission electron microscopy (HAADF-STEM). The sensibility of the latter is around 1019cm-3 and, thus, cathodoluminescence (CL)is required for lower doping levels. Cross sectional analysis on FIB prepared lamella allowed to separate the epilayer behaviour from that of the substrate. Mid-gap centers involving boron, hydrogen and, for some peaks, also nitrogen are revealed. sp2 bonds are also present in the grown epilayer. These transitions make difficult the observation of excitonic recombinations in the cross section configuration.en_US
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dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/openAccess
dc.sourcePhysica Stauts solidi C 1-5 (2011)en_US
dc.subjecthomoepitaxial diamond, boron-doped, TEM, HAADF and CLen_US
dc.subjecthomoepitaxial diamonden_US
dc.subjectboron-dopeden_US
dc.subjectTEMen_US
dc.subjectHAADF and CLen_US
dc.titleCross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layersen_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.description.physDesc5 pages
dc.identifier.doi10.1002/pssc.201083991


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